document number: 93024 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 30-oct-08 1 ultrafast soft recovery diode, 80 a fred pt tm 80EBU02 vishay high power products features ? ultrafast recovery ? 175 c operating junction temperature ? screw mounting only ? lead (pb)-free plating ? designed and qualified for industrial level benefits ? reduced rfi and emi ? higher frequency operation ? reduced snubbing ? reduced parts count description/applications these diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for hf welding, power converters and other applications where switching losses are not significant portion of the total losses. product summary t rr 35 ns i f(av) 80 a v r 200 v powertab tm cathode anode rohs compliant absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 200 v continuous forward current i f(av) t c = 112 c 80 a single pulse forward current i fsm t c = 25 c 800 maximum repetitive forward current i frm square wave, 20 khz 160 operating junction and storage temperatures t j , t stg - 55 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 50 a 200 - - v forward voltage v f i f = 80 a - 0.98 1.13 i f = 80 a, t j = 175 c - 0.79 0.92 reverse leakage current i r v r = v r rated - - 50 a t j = 150 c, v r = v r rated - - 2 ma junction capacitance c t v r = 200 v - 89 - pf series inductance l s measured lead to lead 5 mm from package body - 3.5 - nh
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93024 2 revision: 30-oct-08 80EBU02 vishay high power products ultrafast soft recovery diode, 80 a fred pt tm dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - - 35 ns t j = 25 c i f = 80 a v r = 160 v di f /dt = 200 a/s -32- t j = 125 c - 52 - peak recovery current i rrm t j = 25 c - 4.4 - a t j = 125 c - 8.8 - reverse recovery charge q rr t j = 25 c - 70 - nc t j = 125 c - 240 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units thermal resistance, junction to case r thjc --0.70 k/w thermal resistance, junction to heatsink r thcs mounting surface, flat, smooth and greased - 0.2 - weight --5.02g -0.18- oz. mounting torque 1.2 (10) - 2.4 (20) n m (lbf in) marking device case style powertab tm 80EBU02
document number: 93024 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 30-oct-08 3 80EBU02 ultrafast soft recovery diode, 80 a fred pt tm vishay high power products fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 1 10 100 1000 0 0.5 1 1.5 2 2.5 t = 175?c t = 125?c t = 25?c j j j reverse voltage - v r (v) reverse current - i r (?) 0.001 0.01 0.1 1 10 100 1000 0 50 100 150 200 25?c t = 175?c j 125?c reverse voltage - v r (v) junction capacitance - c t (pf) 10 100 1000 10000 1101001000 t = 25?c j t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (?/w) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 2 t 1 t p dm notes: 1. duty factor d = t1/ t2 2. peak tj = pdm x zthjc + tc
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93024 4 revision: 30-oct-08 80EBU02 vishay high power products ultrafast soft recovery diode, 80 a fred pt tm fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward powe r loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f (av) (a) allowable case temperature (?) 60 80 100 120 140 160 180 0 20406080100120 dc square wave (d = 0.50) 80% rated vr applied see note (1) average power loss ( watts ) average forward current - i f (av) (a) 0 20 40 60 80 100 120 02040608010012 0 dc rms limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 trr ( ns ) di f /dt (a/? ) 10 20 30 40 50 60 70 0 0 0 1 0 0 1 if = 160a if = 80a if = 40a vr = 160v tj = 125?c tj = 25?c qrr ( nc ) di f /dt (a/? ) 0 200 400 600 800 1000 1200 0 0 0 1 0 0 1 vr = 160v tj = 125?c tj = 25?c if = 160a if = 80a if = 40a
document number: 93024 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 30-oct-08 5 80EBU02 ultrafast soft recovery diode, 80 a fred pt tm vishay high power products fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adj u st q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of c u rrent thro u gh zero crossing (2) i rrm - peak re v erse reco v ery c u rrent (3) t rr - re v erse reco v ery time meas u red from zero crossing point of negati v e going i f to point w here a line passing thro u gh 0.75 i rrm and 0.50 i rrm extrapolated to zero c u rrent. (4) q rr - area u nder c u r v e defined b y t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of c u rrent d u ring t b portion of t rr
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93024 6 revision: 30-oct-08 80EBU02 vishay high power products ultrafast soft recovery diode, 80 a fred pt tm ordering information table 1 - current rating (80 = 80 a) 2 - single diode 3 - powertab tm (ultrafast/hyperfast only) 4 - ultrafast recovery 5 - voltage rating (02 = 200 v) device code 5 13 24 80 e b u 02 links to related documents dimensions http://www.vishay.com/doc?95240 part marking information http://www.vishay.com/doc?95370
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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